[18p-F206-1~15] 6.2 Carbon-based thin films

△ [18p-F206-5] Influence of SiO₂ thin films formed on the hydrogen-terminated diamond surface on two-dimensional-hole-gas

〇(B)Taichi Yabe¹, Kudo Takuya¹, Nobutaka oi¹, Satoshi Okubo¹, Kiyotaka Horikawa¹, Shotaro Amano¹, Masakuni Hideko¹, Ikuto Tsuyuzaki¹, Taisuke Kageura¹, Shozo Kono¹, Atsushi Hiraiwa¹, Hiroshi Kawarada^1,2 (1.Waseda University, 2.Kagami Memorial Research Institute for Materials Science and Technology)

Keywords:diamond, 2DHG, SiO2

We manufacture 2DHG diamond MOSFET, show excellent withstand voltage characteristics over a wide temperature range, and report stable operation. However, a general diamond MOSFET is a normally-on operation, and a normally-off operation is desired as a power device. Therefore, we have studied a MOSFET that forms a new normally-off operation by forming the SiO 2 thin film under the gate of the MOS structure, improving the adhesion between the C - H surface and A 2 O 3, separating the charge in the Al 2 O 3 from the C - H interface. In this study, we evaluated the influence on 2DHG layer by forming SiO2 thin film between hydrogen-terminated diamond / Al2O3.