[18p-F206-1~15] 6.2 Carbon-based thin films

[18p-F206-9] Device Simulation on Inversion-Type Diamond MOSFET

〇Hisao Miyazaki¹, Tadashi Sakai¹, Tsubasa Matsumoto^2,3, Hiromitsu Kato³, Toshiharu Makino³, Masahiko Ogura³, Norio Tokuda^2,3, Satoshi Yamasaki³ (1.Toshiba R&D Center, 2.Kanazawa Univ., 3.AIST)

Keywords:diamond, MOSFET, device simulation

The degree of ionization of donor/acceptor is strongly temperature dependent in diamond semiconductor, because it has deep donor/acceptor level. We performed device simulations on an inversion-type MOSFET as a model case to assess influence of the temperature dependence on device design. We confirmed that following two concerns are acceptable in inversion-type MOSFETs: Concern of thermal runaway caused by increase of the carrier density by joule heating, and change of the depletion region length caused by temperature dependence of charge-density distribution.