[18p-G203-1~18] 13.5 Semiconductor devices and related technologies

△ [18p-G203-10] Evaluation of multilevel memory characteristics of Ta₂O_5-δ ReRAM with controlled oxygen vacancy

〇(M2C)Yuanlin Li¹, Reon Katsumura¹, Mika Gronroos¹, Atsushi Tsurumaki-Fukuchi¹, Masashi Arita¹, Yasuo Takahashi¹, Hideyuki Andoh², Takashi Morie² (1.Hokkaido Univ., 2.Kyushu Inst. Tech.)

Keywords:Tantalum oxide, ReRAM, Multi-value capability

Being a profound candidate fulfilling Artificial Neural Network at hardware aspects, ReRAM(Resistive Random Access Memory) shows not only binary, but also multi-value capabilities that are essential achieving synapse-like behavior. In this research, we altered the Ta₂O_5-δ fabrication conditions(the oxygen ratio and the thin film's thickness) to investigate the initial resistances and the multi-value capabilities.