[18p-G203-1~18] 13.5 Semiconductor devices and related technologies

[18p-G203-12] Spike-Induced Metal-Insulator Transition in VO₂ Neuron Circuits

〇Takeaki Yajima¹, Tomonori Nishimura¹, Akira Toriumi¹ (1.The Univ. of Tokyo)

Keywords:VO2, metal-insulator transition, neuromorphic

We have studied the novel neuron circuit using the metal insulator transition materials such as VO2 for the furture neuromorphic hardware. When the spike voltages are applied on VO2, the VO2 stays insulating for the single spike, but induces metal-insulator transition for the several consecutive spikes, in analogy to the integrate-and-fire of the real neurons. However, there has been no systematic study on the VO2 metal-insulator transition induced by the time-varying voltage like spike voltages. In this paper, we applied AC voltage with various frequencies on the VO2 two-terminal device and clarified the key parameter of the metal-insulator transition under the time-varying voltage.