[18p-G203-1~18] 13.5 Semiconductor devices and related technologies

[18p-G203-4] Electrical characteristics of MOSFETs using anti-ferroelectric thin films as gate insulators

〇Masashi Yamaguchi¹, Takahiro Gotow¹, Mitsuru Takenaka¹, Shinichi Takagi¹ (1.The Univ. of Tokyo, Faculty of Eng.)

Keywords:anti-ferroelectric, MOSFET, on-current

We simulated the electrical characteristics of MOSFETs using anti-ferroelectric thin films as gate insulators and investigated the effect of the on-currents and the hysteresis of I-V characteristics of MOSFETs. We extracted the parameters of anti-ferroelectric Hf_xZr_1-xO₂ thin films by fitting the P-E curve to the reported P-E data based on the theory of field-induced anti-ferroelectric to ferroelectric phase transition and extracted the parameters of ferroelectric Hf_0.5Zr_0.5O₂ thin films based on Landau-Khalatnikov theory. It is revealed that the on-currents of MOSFETs using anti-ferroelectric or ferroelectric Hf_xZr_1-xO₂ thin films are increased as compared with the SiO₂ thin films and that the hysteresis of MOSFETs using anti-ferroelectric thin films are smaller than ferroelectric thin films.