2:00 PM - 2:15 PM
[18p-G203-4] Electrical characteristics of MOSFETs using anti-ferroelectric thin films as gate insulators
Keywords:anti-ferroelectric, MOSFET, on-current
We simulated the electrical characteristics of MOSFETs using anti-ferroelectric thin films as gate insulators and investigated the effect of the on-currents and the hysteresis of I-V characteristics of MOSFETs. We extracted the parameters of anti-ferroelectric HfxZr1-xO2 thin films by fitting the P-E curve to the reported P-E data based on the theory of field-induced anti-ferroelectric to ferroelectric phase transition and extracted the parameters of ferroelectric Hf0.5Zr0.5O2 thin films based on Landau-Khalatnikov theory. It is revealed that the on-currents of MOSFETs using anti-ferroelectric or ferroelectric HfxZr1-xO2 thin films are increased as compared with the SiO2 thin films and that the hysteresis of MOSFETs using anti-ferroelectric thin films are smaller than ferroelectric thin films.