Piezoelectronic magnetoresistive-device and its low-voltage MRAM application

Yota Takamura; Shu'ichiro Yamamoto; Hiroshi Funakubo; Minoru K. Kurosawa; Shigeki Nakagawa; Satoshi Sugahara

Presentation information

Oral presentation

13 Semiconductors » 13.5 Semiconductor devices and related technologies

[18p-G203-1~18] 13.5 Semiconductor devices and related technologies

Sun. Mar 18, 2018 1:15 PM - 6:00 PM G203 (63-203)

Masumi Saitoh(TOSHIBA), Kousuke Miyaji(Shinshu Univ.)

3:00 PM - 3:15 PM

[18p-G203-8] Piezoelectronic magnetoresistive-device and its low-voltage MRAM application

〇Yota Takamura¹, Shu'ichiro Yamamoto², Hiroshi Funakubo³, Minoru K. Kurosawa¹, Shigeki Nakagawa¹, Satoshi Sugahara² (1.Dept. of Electr. and Electron. Eng., Tokyo Inst. of Tech., 2.Lab. for Future Interdisciplinary Research of Sci. and Tech. (FIRST), Tokyo Inst. of Tech., 3.Dept. of Mater. Sci. and Eng., Tokyo Inst. of Tech.)

Keywords:MRAM, Ultra-low voltage, Inverse magnetostriction effect