[18p-P14-1~19] 15.6 Group IV Compound Semiconductors (SiC)

▲ [18p-P14-17] Impact of passivation treatments on channel mobility for p-channel 4H-SiC MOSFETs

〇Xingyan Zhou¹, Dai Okamoto¹, Tetsuo Hatakeyama², Mitsuru Sometani², Shinsuke Harada², Yuki Karamoto¹, Xufang Zhang¹, Noriyuki Iwamuro¹, Hiroshi Yano¹ (1.U. Tsukuba, 2.AIST)

Keywords:4H-SiC, p-channel MOSFETs, channel mobility

Recently, p-channel 4H-SiC MOSFETs have attracted much attention in complementary inverter and CMOS-IC applications. However, their practical use is impeded by the high channel resistance. Therefore, it is necessary to analyze the mechanism of the low channel mobility. However, there are only a few reports on channel mobility for p-channel 4H-SiC MOSFETs. To understand the channel carrier transport mechanisms, the Hall-effect measurement for the channel region of MOSEFTs is effective because the field-effect mobility (μ_FE) suffers from the uncertainty in channel carrier concentration. In this work, we evaluated the impact of passivation treatments on both the field-effect mobility and channel Hall mobility for p-channel 4H-SiC MOSFETs.