[18p-P14-1~19] 15.6 Group IV Compound Semiconductors (SiC)

[18p-P14-2] Effect of melt-back process on the quality of grown crystal in SiC solution growth

〇Kotaro Kawaguchi¹, Kazuaki Seki², Kazuhiko Kusunoki^1,2 (1.Tohoku Univ., 2.NSSMC)

Keywords:solution growth, 4H-SiC

In the solution growth method, melt-back process is conducted in order to dissolve a surface of seed crystal before growth and it is considered as an important process affecting quality of grown crystal. However, little work has been investigated about it and its details are not clarified. Therefore, the purpose of our study is to clarify the effect of melt-back on crystallinity of grown crystal. In this study, we conducted solution growth experiments with/without melt-back. Then, we performed optical microscopic observation of the seed/grown crystal interfaces and compared the crystalline quality of grown crystals.