[18p-P14-1~19] 15.6 Group IV Compound Semiconductors (SiC)

[18p-P14-9] Characterization of band alignment of metal/SiO₂/SiC at different gate electrode

〇Satoshi Yasuno¹, Tomoyuki Koganezawa¹, Kousuke Muraoka², Kiichi kobayakawa², Seiji Ishikawa³, Shin-Ichiro Kuroki² (1.JASRI, 2.Hiroshima Univ. Nanodevice, 3.Phenitec Semiconductor)

Keywords:SiC, HAXPES

In this study, we carried out the hard X-ray photoelectron spectroscopy (HAXPES) to evaluate the band alignment of metal/SiO₂/SiC at different metal gate. HAXPES results indicated that the band offset and the band bending at the SiO₂/SiC interface depend on the work function of metal gate.