[18p-P14-1~19] 15.6 Group IV Compound Semiconductors (SiC)

[18p-P14-8] Mapping of Ni/SiN/n-SiC MIS structure using scanning internal photoemission microscopy

〇Takanori Hashidume¹, Masaru Sato², Mayumi Takeyama², Kenji Shiojima¹ (1.Univ. of Fukui, 2.Kitami Inst. Technol.)

Keywords:SiC, MIS structure, scanning internal photoemission microscopy

We characterized degradation of the Ni/SiN/n-SiC MIS structure by voltage application by using scanning internal photoemission microscopy. A uniform distribution of the photocurrent was obtained before applying the voltage . After applying the forward voltage stress up to 30 V, we observed the regions with uneven surface morphology in the microscopy image, where the photocurrent increase three times. We demonstrated that SIPM is a powerful tool for characterized of degradation of the MIS structure by applying the voltage.