The 65h JSAP Spring Meeting, 2018

Presentation information

Poster presentation

13 Semiconductors » 13.2 Exploratory Materials, Physical Properties, Devices

[18p-P6-1~18] 13.2 Exploratory Materials, Physical Properties, Devices

Sun. Mar 18, 2018 1:30 PM - 3:30 PM P6 (P)

1:30 PM - 3:30 PM

[18p-P6-15] Evaluation of lattice displacement and residual hydrogen in GaN by rutherford backscattering and elastic recoil detection analysis

Kazuki Sato1, Kazumasa Kushida2, Tomoaki Nishimura1, Kazuo Kuriyama1, Toru Nakamura1 (1.Hosei Univ., 2.Osakakyoiku Univ.)

Keywords:GaN