The 65h JSAP Spring Meeting, 2018

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13 Semiconductors » 13.2 Exploratory Materials, Physical Properties, Devices

[18p-P6-1~18] 13.2 Exploratory Materials, Physical Properties, Devices

Sun. Mar 18, 2018 1:30 PM - 3:30 PM P6 (P)

1:30 PM - 3:30 PM

[18p-P6-17] Simulation of TOF transient currents by the CIP method

〇Yoshitaka Mishima1, Takahiro Masuda1, Kazuhiko Suzuki1, Satoru Seto2 (1.HUS, 2.NIT, Ishikawa Coll.)

Keywords:TOF, CIP, Drift diffusion equation