The 65h JSAP Spring Meeting, 2018

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13 Semiconductors » 13.2 Exploratory Materials, Physical Properties, Devices

[18p-P6-1~18] 13.2 Exploratory Materials, Physical Properties, Devices

Sun. Mar 18, 2018 1:30 PM - 3:30 PM P6 (P)

1:30 PM - 3:30 PM

[18p-P6-2] Relationship between carrier density and IR absorption of annealed Mg2Si crystals(Ⅱ)

〇(M1)Fuko Yaguchi1, Kohei Nakano1, Takuma Ishikawa1, Haruhiko Udono1 (1.Ibaraki Univ.)

Keywords:Mg2Si, semiconductor, IR absorption