Electrical characteristics of Mg<sub>2</sub>Si mesa-PD’s fabricated under various RTD process

Presentation information

Poster presentation

13 Semiconductors » 13.2 Exploratory Materials, Physical Properties, Devices

Sun. Mar 18, 2018 1:30 PM - 3:30 PM P6 (P)

1:30 PM - 3:30 PM

〇Fumiya Takahashi¹, Tatsuya Nakano¹, Haruhiko Udono¹ (1.Ibaraki Univ.)

Keywords:Mg2Si, photodiode