[18p-P7-1~7] 13.3 Insulator technology

[18p-P7-7] Paramagnetic point defects in silicon nitride films annealed at 1050℃

〇(M1)Shinji Yamaguchi¹, Osamu Kazumi¹, Kiyoteru Kobayashi¹ (1.Tokai Univ.)

Keywords:silicon nitride