[18p-P8-1~15] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[18p-P8-12] Annealing Effect on the Luminescence Properties of Er Doped GaAs Grown by Molecular Beam Epitaxy

〇Daisuke Igarashi¹, Kengo Takamiya¹, Takashi Ito², Shuhei Yagi¹, Hidehumi Akiyama², Hiroyuki Yaguchi¹ (1.Saitama Univ., 2.ISSP, Univ. Tokyo)

Keywords:MBE, GaAs, Erbium