Daisuke Igarashi

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Speaker, Author, Co-Author

Sun. Mar 18, 2018 1:30 PM - 3:30 PM P8 (P)

Poster presentation
| 15 Crystal Engineering
| 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[18p-P8-1~15] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

1:30 PM - 3:30 PM

[18p-P8-12] Annealing Effect on the Luminescence Properties of Er Doped GaAs Grown by Molecular Beam Epitaxy

〇Daisuke Igarashi¹, Kengo Takamiya¹, Takashi Ito², Shuhei Yagi¹, Hidehumi Akiyama², Hiroyuki Yaguchi¹ (1.Saitama Univ., 2.ISSP, Univ. Tokyo)