1:30 PM - 3:30 PM
[18p-P8-6] Characterization by RHEED intensity measurement from InAs quantum dots
during cap layer growth.
Keywords:InAs-QD, RHEED
Presentation information
Poster presentation
15 Crystal Engineering » 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy
[18p-P8-1~15] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy
Sun. Mar 18, 2018 1:30 PM - 3:30 PM P8 (P)