[19a-B203-1~9] 3.13 Semiconductor optical devices

▲ [19a-B203-4] Lasing characteristics of 1.5µm GaInAsP ridge laser diode on directly bonded InP/Si substrate

〇(D)Gandhi Kallarasan¹, Naoki Kamada¹, Yuya Onuki¹, Kazuki Uchida¹, Hirokazu Sugiyama¹, Xu Han¹, Natsuki Hayasaka¹, Masaki Aikawa¹, Kazuhiko Shimomura¹ (1.Sophia univ.)

Keywords:Direct bonding, Silicon photonics, semiconductor laser diode

The increasing usage and the future demand for the Si-based photonic devices will enable a trend of high level opto-electronic devices. we have established a new integration method for the monolithic integration of InP optical devices on the Si substrate. By this new integration method, we could obtain lasing characteristics on the directly bonded InP/Si substrate. We have already demonstrated the successful lasing operation of GaInAsP broad lasers on InP/Si substrate . In this paper, we report the lasing characteristics of 1.5µm GaInAsP ridge laser diode on directly bonded InP/Si substrate.