Evaluation of Minority Carrier Lifetime in FZ-Si Affected by Si-IGBT Process

Hiroto Kobayashi; Ryo Yokogawa; Takahiro Suzuki; Yoichiro Numazawa; Atsushi Ogura; Shin-ichi Nishizawa; Takuya Saraya; Kazuo Ito; Toshihiko Takakura; Shin-ichi Suzuki; Munetoshi Fukui; Kiyoshi Takeuchi; Toshiro Hiramoto

Presentation information

Oral presentation

13 Semiconductors » 13.4 Si wafer processing /Si based thin film /Interconnect technology/ MEMS/ Integration technology

[19a-C101-1~10] 13.4 Si wafer processing /Si based thin film /Interconnect technology/ MEMS/ Integration technology

Mon. Mar 19, 2018 9:15 AM - 11:45 AM C101 (52-101)

Kuniyuki Kakushima(Titech)

10:00 AM - 10:15 AM

△ [19a-C101-4] Evaluation of Minority Carrier Lifetime in FZ-Si Affected by Si-IGBT Process

〇Hiroto Kobayashi¹, Ryo Yokogawa^1,2, Takahiro Suzuki¹, Yoichiro Numazawa¹, Atsushi Ogura¹, Shin-ichi Nishizawa³, Takuya Saraya⁴, Kazuo Ito⁴, Toshihiko Takakura⁴, Shin-ichi Suzuki⁴, Munetoshi Fukui⁴, Kiyoshi Takeuchi⁴, Toshiro Hiramoto⁴ (1.Meiji Univ., 2.JSPS Research Fellow DC, 3.Kyushu Univ., 4.Tokyo Univ.)

Keywords:Insulated Gate Bipolar Transistor, Lifetime, Silicon