[19a-C101-1~10] 13.4 Si wafer processing /Si based thin film /Interconnect technology/ MEMS/ Integration technology

[19a-C101-5] Damageless Doping Technology for FinFETs by Spin-Coated PDS

〇Takashi Matsukawa¹, Takahiro Mori¹, Yoshihiro Sawada², Yohei Kinoshita², Yongxun Liu¹, Meishoku Masahara¹ (1.AIST, 2.Tokyo Ohka Kogyo)

Keywords:FinFET, doping, solid diffusion

Damageless doping process for FinFETs is demonstrated by solid diffusion utilizing cost-effective spin-coated phosphorus dopes silica (PDS). Damageless nature of the PDS diffusion doping is confirmed by TEM characterization of the doped fin. The PDS diffusion is successfully implemented in the extension doping of the FinFETs.