[19a-C101-1~10] 13.4 Si wafer processing /Si based thin film /Interconnect technology/ MEMS/ Integration technology

[19a-C101-6] H+ ion implantation used to reduce temperature for activating B atoms implanted in silicon

〇Tomokazu Nagao¹, Yutaka Inouchi¹, Junichi Tatemichi¹, Keisuke Yasuta², Takuma Uehara², Masahiko Hasumi², Toshiyuki Sameshima² (1.NISSIN ION EQUIPMENT, 2.TUAT)

Keywords:ion implantation, low temperature activation

Activation of implanted dopant atoms at low temperatures is necessary to develop the low-temperature fabrication technology for semiconductor devices such as thin film transistors (TFT).
In this paper, we report the activation of B atoms at low temperature by H ion implantation followed by B ion implantation to form crystal defects.