[19a-C101-1~10] 13.4 Si wafer processing /Si based thin film /Interconnect technology/ MEMS/ Integration technology

[19a-C101-9] SiC Nanodots Formation in Bulk-Si using Hot C+ Ion Implantation Substrate (Ⅲ):C Dose Dependency

Sho Irie¹, 〇Masaki Yamamoto¹, Sinji Nakada¹, Yusuke Omata¹, Takashi Aoki¹, Toshiyuki Sameshima², Tomohisa Mizuno¹ (1.Kanagawa Univ., 2.Tokyo Univ Agri. Tech.)

Keywords:SiC, hot ion impantation, quantum dot