[19a-D101-1~9] 16.3 Bulk, thin-film and other silicon-based solar cells

▼ [19a-D101-2] CARRIER TRANSPORT IN PEDOT:PSS/c-Si HETEROJUNCTION SOLAR CELLS

〇A.T.M. Saiful Islam¹, Koji Kasahara¹, Takanori Kuroki¹, Ryo Ishikawa¹, Hajime Shirai¹ (1.Saitama University)

Keywords:Crystaline silicon, PEDOT:PSS, Transport layer

We have investigated the front and back PEDOT:PSS/n-Si heterojunction solar cells. The specific feature is that the open-circuit voltage increased up to 625 mV with low resistive Si substrate (0.1~0.5 Ω·cm). However, the junction properties of PEDOT:PSS/n-Si and potential of hole-blocking layer is still not well understood. To this aim, here, we report that the current-voltage (I-V) and capacitance-voltage (C-V) characterizations for PEDOT:PSS/n-Si solar cells with differently doped n-Si wafers. In addition, the potential of several hole-blocking layers is compared through surface recombination velocity (SRV) from dark- and photo-I-V curves. The PEDOT:PSS/n-Si junction form strong inversion, which suggest that minority carrier dominate the carrier transport.