[19a-D101-1~9] 16.3 Bulk, thin-film and other silicon-based solar cells

[19a-D101-7] i-a-Si:H passivation layer deposited by facing target sputtering using 2-step deposition

Faris Akira Bin Mohd Zulkifly¹, Yuta Shiratori¹, Kazuyoshi Nakada¹, 〇Shinsuke Miyajima¹ (1.Tokyo Tech)

Keywords:silicon heterojunction solar cells, i-a-Si:H passivation layer, facing target sputtering

Intrinsic a-Si:H passivation layers were deposited by facing target sputtering using two-step deposition method. The c-Si wafer passivated by 6.9-nm-thick i-a-Si:H showed an effective lifetime of 1.05 ms and an implied Voc of 0.699 V at 1 sun illumination. In addition, a high deposition rate of 14.8 nm/min was obtained.