[19a-D103-1~12] 15.6 Group IV Compound Semiconductors (SiC)

[19a-D103-1] Effect of degree of supersaturation of carbon on solution growth of 4H-SiC using Cr-Si solvent

〇Yoichiro Nagamatsu¹, Sakiko Kawanishi¹, Hiroyuki Shibata¹, Takeshi Yoshikawa² (1.Tohoku Univ., 2.Tokyo Univ.)

Keywords:crystal growth, SiC, semiconductor