Yoichiro Nagamatsu

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Speaker, Author, Co-Author

Mon. Mar 19, 2018 9:00 AM - 12:15 PM D103 (56-103)

Oral presentation
| 15 Crystal Engineering
| 15.6 Group IV Compound Semiconductors (SiC)

[19a-D103-1~12] 15.6 Group IV Compound Semiconductors (SiC)

9:00 AM - 9:15 AM

[19a-D103-1] Effect of degree of supersaturation of carbon on solution growth of 4H-SiC using Cr-Si solvent

〇Yoichiro Nagamatsu¹, Sakiko Kawanishi¹, Hiroyuki Shibata¹, Takeshi Yoshikawa² (1.Tohoku Univ., 2.Tokyo Univ.)