[19a-D103-1~12] 15.6 Group IV Compound Semiconductors (SiC)

▲ [19a-D103-12] A study of the CVD growth condition for filling 50-μm 4H-SiC deep trench

〇Shiyang Ji¹, Ryoji Kosugi¹, Kazutoshi Kojima¹, Kohei Adachi^1,2, Yasuyuki Kawada^1,3, Kazuhiro Mochizuki^1,4, Akiyo Nagata¹, Yasuko Matsukawa¹, Yoshiyuki Yonezawa¹, Sadafumi Yoshida¹, Hajime Okumura¹ (1.AIST, 2.Mitsubishi Electric, 3.Fuji Electric, 4.Hitachi Ltd.)

Keywords:trench filling, silicon carbide, CVD

Different with the shallow trench filling, there have some new problems in filling 50-um 4H-SiC deep trench, which were addressed and studied in this work. Then, the revision of CVD growth condition was proposed. Finally, the complete fill of the deepest 4H-SiC trench to now, was achieved.