Shiyang Ji

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Speaker, Author, Co-Author

Mon. Mar 19, 2018 9:00 AM - 12:15 PM D103 (56-103)

Oral presentation
| 15 Crystal Engineering
| 15.6 Group IV Compound Semiconductors (SiC)

[19a-D103-1~12] 15.6 Group IV Compound Semiconductors (SiC)

12:00 PM - 12:15 PM

▲ [19a-D103-12] A study of the CVD growth condition for filling 50-μm 4H-SiC deep trench

〇Shiyang Ji¹, Ryoji Kosugi¹, Kazutoshi Kojima¹, Kohei Adachi^1,2, Yasuyuki Kawada^1,3, Kazuhiro Mochizuki^1,4, Akiyo Nagata¹, Yasuko Matsukawa¹, Yoshiyuki Yonezawa¹, Sadafumi Yoshida¹, Hajime Okumura¹ (1.AIST, 2.Mitsubishi Electric, 3.Fuji Electric, 4.Hitachi Ltd.)

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