[19a-D103-1~12] 15.6 Group IV Compound Semiconductors (SiC)

[19a-D103-3] Measurement of melt properties of Si-40mol%Cr solvent and influence to SiC in the solution growth

〇(D)Hironori Daikoku¹, Sakiko Kawanishi², Takehiko Ishikawa³, Takeshi Yoshikawa¹ (1.Univ. Tokyo, 2.Tohoku Univ., 3.JAXA)

Keywords:SiC, Solution growth

To develop the SiC growth with large diameter and high growth rate by solution growth, the accurate control of temperature and velocity distribution by CFD simulation is needed. The physical properties of Si have been used as that of solution. In this study, The density, viscosity and surface tension of Si-40mol%Cr alloy were measured by electrostatic levitation. In addition, the temprature and velocity distribution were calculated using the physical properties of Si and Si-40mol%Cr by CFD simulation.