The 65h JSAP Spring Meeting, 2018

Presentation information

Oral presentation

15 Crystal Engineering » 15.6 Group IV Compound Semiconductors (SiC)

[19a-D103-1~12] 15.6 Group IV Compound Semiconductors (SiC)

Mon. Mar 19, 2018 9:00 AM - 12:15 PM D103 (56-103)

Toshinori Taishi(Shinshu Univ.)

10:00 AM - 10:15 AM

[19a-D103-5] Suggestion of optimization method using thermo-fluid analysis and machine learning

Yosuke Tsunooka1,2, Nobuhiko Kokubo1,2, Shunta Harada1, Miho Tagawa1, Toru Ujihara1,2 (1.Nagoya Univ., 2.AIST GaN-OIL)

Keywords:machine learning, simulation, optimization

In SiC solution growth, flow and supersaturation are important, thus thermo-fluid analysis is frequently conducted. We have successfully predicted the results of thermo-fluid analysis of solution by the neural network. In this study, we established a method of parameter optimization of crystal growth in prediction model by neural network. Firstly, we performed 800 kinds of fluid analysis with growth parameters decided randomly, and trained prediction model by neural network. Using the prediction model, we searched optimum parameters with target function determined representing ideal growth conditions. We discovered various optimum parameters that satisfy the conditions.