[19a-D103-1~12] 15.6 Group IV Compound Semiconductors (SiC)

[19a-D103-7] High quality 4H-SiC substrates grown by solution growth method for power device application

〇Kazuhiko Kusunoki¹, Kazuaki Seki¹, Hironori Daikoku², Hiroaki Saitoh², Isao Kobayashi², Hiroshi Mihara² (1.NSSMC, 2.TOYOTA)

Keywords:solution growth, 4H-SiC

Recently, we have succeeded in growing a solvent inclusion free 4H-SiC bulk crystal by solution growth method. In the present study, we made a two-inch-diameter SiC (0001) 4° off-axis solution-grown substrate and conducted CVD epitaxial growth on it. We performed crystalline quality evaluation of the epi-wafer. Then, we conducted first demonstration of wafer level SBDs (Schottky Barrier Diodes) fabrication using the solution-grown substrate.