[19a-D103-1~12] 15.6 Group IV Compound Semiconductors (SiC)

[19a-D103-8] Evaluation of dislocation propagation behavior in epitaxial growth process on “4H-SiC wafer grown by solution method” using synchrotron X-ray topography

〇Kazuaki Seki¹, Kazuhiko Kusunoki¹, Shunta Harada², Toru Ujihara² (1.Nippon Steel & Sumitomo Metal Corp., 2.Nagoya Univ.)

Keywords:SiC, Solution growth

In our previous study, we have fabricated ultra-high quality 4H-SiC 4 ° off wafers that do not contain BPD and have extremely low TSD density. In this study, we evaluate the propagation behavior of BPD and TSD during CVD epitaxial growth process on “4H-SiC off wafer grown by solution method” using synchrotron X-ray topography.