[19a-D104-1~11] CS6 10.1 & 10.2 & 10.3 Code-sharing session

▲ [19a-D104-9] The Spin Polarized Electronic Structure of
Metal Overlayers on Magneto-Electric Cr₂O₃

〇Takashi Komesu¹, Shi Cao¹, Renu Choudhary², Pankaj Kumar², Priyanka Manchanda¹, Kazuaki Taguchi³, Taichi Okuda⁴, Koji Miyamoto⁴, Ralph Skomski¹, Gong Chen⁵, Arti Kashyap², Peter Dowben¹ (1.Univ. of Nebraska, 2.Indian Insti. of Tech., 3.Hiroshima University, 4.HiSOR, 5.Lawrence Berkeley Nat. Lab.)

Keywords:electronic structure, megneto-electric materila, spin polarized photoemission

Perpendicular exchange-bias structures, based on the antiferromagnetic and magneto-electric Cr₂O₃(0001), have drawn considerable attention, in part because of potential applications in voltage controlled spintronics. The boundary spin polarization at the surface of the magnetoelectric Cr₂O₃(0001), can be isothermally voltage-controlled to provide perpendicular voltage-controlled exchange-bias in an adjacent ferromagnet [1,2]. This means that the adjacent ferromagnet is typically chosen with perpendicular magnetic anisotropy, e.g. Co-Pd or Co-Pt multilayers. Recently, scalable magneto-electric magnetic random access memory, based on the anomalous Hall effect that occurs in Pt overlayers on Cr₂O₃ has been proposed [3,4]. But this latter memory device concept depends on an induced polarization in the Pd or Pt overlayer on Cr₂O₃(0001).
In this presentation, we illustrate the induced polarization in several different overlayers, such as Pt, Pb, and Co, on the top of Cr₂O₃(0001). The interaction between the Cr₂O₃(0001) surface and an overlayer can be quite complex [5,6]. For example, we were recently able to show that the antiferromagnetic exchange coupling between the surface Cr ions of magneto-electric Cr₂O₃(0001) and Co atoms in an overlayer, shows significant canting, as seen in Figure 1, and demonstrated by spin polarized photoemission in Figure 2.