[19a-E202-1~10] 15.4 III-V-group nitride crystals

△ [19a-E202-1] Strain Field Analysis of Threading Dislocations in GaN Single Crystal Using Raman Spectroscopy

〇Nobuhiko Kokubo^1,2, Yosuke Tsunooka^1,2, Fumihiro Fujie¹, Junji Ohara¹, Shoichi Onda¹, Hisashi Yamada², Mitsuaki Shimizu², Shunta Harada¹, Miho Tagawa¹, Toru Ujihara^1,2 (1.Nagoya Univ., 2.AIST GaN-OIL)

Keywords:Gallium nitride, Dislocation, Raman spectroscopy

We performed the evaluation of the dislocations in gallium nitride single crystal using microscopic Raman spectroscopy. By making the results of X-ray topography, etching and simulation correspond to the Raman mapping image of E2H peak shift, we determined the edge component of threading dislocation from mapping image. Furthermore, it is confirmed that the TEM observation and the mapping measurement result are consistent. Also, we classified dislocations with high probability by machine learning.