[19a-E202-1~10] 15.4 III-V-group nitride crystals

[19a-E202-2] Identification of Type of Threading Dislocation in GaN Crystals Using Multiphoton-Excitation-Photoluminescence

〇Tomoyuki Tanikawa¹, Takehiro Yoshida², Takashi Matsuoka¹ (1.IMR, Tohoku Univ., 2.SCIOCS)

Keywords:GaN, Multiphoton-Excitation Photoluminescence, Threading Dislocations

The type of threading dislocations in GaN crystals was identified using multiphoton-excitation photoluminescence (MPPL). Dark lines, which are observed in MPPL images, are classified into three types according to their contrast and inclination angle. These results are compared with etch pits formed by KOH etching. The size of etch pits is different by its dislocation type. By comparing between dark lines and etch pits, edge-type, screw-type, and mixed-type threading dislocations are able to be identified from the characteristics of dark lines measured by MPPL. This result enables us the nondestructive characterization of threading dislocations in GaN crystals.