Suppression of channel shortening effect for InGaZnO Thin-Film-Transistor by In-Sn-O source/drain electrodes

Presentation information

Oral presentation

13 Semiconductors » 13.5 Semiconductor devices and related technologies

Mon. Mar 19, 2018 9:00 AM - 12:00 PM G203 (63-203)

Masaharu Kobayashi(Univ. of Tokyo), Tetsuo Endoh(Tohoku Univ.)

9:00 AM - 9:15 AM

〇Junji Kataoka¹, Nobuyoshi Saito¹, Tomomasa Ueda¹, Tsutomu Tezuka¹, Tomoaki Sawabe¹, Keiji Ikeda¹ (1.Toshiba memory corp.)

Keywords:oxide semiconductor, low-resistivity region, SSRM