[19a-P6-1~79] 17 Nanocarbon Technology（Poster）

[19a-P6-69] Fabrication of MoS₂ thin films by combination of RF sputtering deposition and sulfurization process

〇Kenta Seki¹, Yuto Naitoh¹, Noriyuki Hasuike¹, Susumu Kamoi², Kenji Kisoda³ (1.Kyoto Inst. Tech., 2.Kyoto Prefectural Technology Center, 3.Wakayama Univ.)

Keywords:MoS2

In promoting miniaturization in the semiconductor industry, MoS₂, a two-dimensional material, attracts attention. Although MoS₂ of a two-dimensional material becomes a direct transition type when it becomes a single layer, a method capable of producing single layer MoS₂ in a large area has not been established. In this study, we investigated optimum film forming conditions and post-processing conditions of MoS₂ thin films using high frequency sputtering method capable of large area thin film fabrication.