[19p-A404-1~19] 3.7 Laser processing

△ [19p-A404-7] Formation of low-k nanoporous SiO₂ films by pulsed laser deposition

〇(B)Ryota Miyano¹, Toshihumi Kikuchi^1,2, Kaname Imokawa^1,2, Daisuke Nakamura¹, Hiroshi Ikenoue^1,2 (1.ISEE, Kyushu Univ., 2.Dept. of Gigaphoton, Kyushu Univ.)

Keywords:parus laser deposition, low-k materials, nanoporous SiO2

Low-k films with dielectric constant below 2 are needed as inter-layer insulating film for next generation ULSI devices. However, the solutions for the formation of low-k films are not known yet. We think that addition of pores or gaps to existing low-k materials (nanoporus low-k) is the only way to get k values below 2.
We have studied on pulsed-laser deposition (PLD) for the formation of low-k materials. In this report, we demonstrate electrical characteristics and structure of nanoporous SiO2 films deposited by pulsed UV laser PLD.