5:45 PM - 6:00 PM
[19p-C104-17] Polarization Reversal and Memory Effects in Anti-Ferroelectric PbZrO3 Thin Films
Keywords:Anti-ferroelectrics, memory
In this study, the polarization reversal and memory effects in anti-ferroelectric PbZrO3(PZ) films are evaluated. Preparation and basic properties of PZ films were reported. PZ films were fabricated from two sol-gel-type solutions. The starting Pb/Zr ratio of the solutions was 1.1:1. The solutions were spin-coated onto a Pt/Ti/SiO2/Si substrate. The films were then dried in air at 400ºC for 10 min. This process was repeated three times, and the films were crystallized in air at various temperatures (600 - 700ºC) for 1 h. The obtained film was (111) oriented, the thickness was 500 nm. Thin-film Pt top electrodes were deposited by magnetron sputtering. The polarization hysteresis loops and field-dependent dielectric constants were measured using ferroelectric tester (aixACCT TF2000) and Agilent Technology impedance analyzer, 4192A, respectively. The dielectric constants were computed from the capacitance measured at a small signal oscillation voltage of 100 mV and frequency of 100 kHz. Memory retention tests consisting “write” and “read” sequence were conducted by using ferroelectric tester. Prepared PZ films exhibited double hysteresis loop. And data retention tests show the possibilities of 4-state memory effects in the obtained PZ films.