The 65h JSAP Spring Meeting, 2018

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Oral presentation

17 Nanocarbon Technology » 17.3 Layered materials

[19p-C202-1~17] 17.3 Layered materials

Mon. Mar 19, 2018 1:45 PM - 6:30 PM C202 (52-202)

Akinobu Kanda(Univ. of Tsukuba), Yasuhide Ohno(Tokushima univ)

6:00 PM - 6:15 PM

[19p-C202-16] Back-gate bias architecture for control of carrier injection in WSe2 FET

〇Takamasa Kawanago1, Hiroyuki Takagi1, Ryo Ikoma1, Tomoaki Oba1 (1.Tokyo Institute of Technology)

Keywords:tungsten diselenide, field-effect transistor, back-gate bias architecture