[19p-C202-1~17] 17.3 Layered materials

△ [19p-C202-3] Evaluation of contact properties for semiconducting 2H phase of MoTe₂ via scanning gate microscopy

〇(B)Kohei Sakanashi¹, Kota Kamiya¹, Hidemitsu Ouchi¹, Tomoki Yamanaka¹, Katsuhiko Miyamoto¹, Takashige Omatsu¹, Jonathan P.Bird², Nobuyuki Aoki¹ (1.Chiba Univ., 2.SUNY Buffalo)

Keywords:Transition Metal Dichalcogenides, Polymorphism, Scanning Gate Microscopy

We fabricated the in-plane homojunction of semiconducting phase and metallic phase induced by high power density laser irradiation on single crystal MoTe₂ which is one of Transitional Metal Dichalcogenide. From the transport properties, the Schottky diode-like rectification characteristics were observed, but we recognized through the scanning gate microscopy that the Schottky barriers weren't formed at interface of laser-induced metallic/semiconducting phase but electrode(Pd)/semiconducting phase for any carrier-type and injection direction.