[19p-C204-1~17] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

[19p-C204-1] Investigation of Ge Etching Mechanism by Neutral Beam Etching

〇Shuichi Noda^1,2, Yosuke Tanimoto³, Takuya Ozaki², Hideyuki Kurihara³, Yasuyuki Hoshino³, Kazuhiko Endo^1,2, Seiji Samukawa^1,2 (1.AIST, 2.Tohoku Univ., 3.SHOWA DENKO)

Keywords:neutral beam etching, Ge, etching mechanism