[19p-C204-1~17] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

[19p-C204-17] Improvement of Etching Process Distribution Controllability within a Wafer by Tuning Etching-byproduct Density Distribution

〇Tetsuo Kawanabe¹, Isao Mori¹, Motohiro Tanaka¹, Naoki Yasui¹ (1.HHT)

Keywords:etching, gas flow, plasma

In semiconductor manufacturing, the number of production processes is increasing, for instance, due to the introduction of multi-patterning. Therefore, improving yield in each process is necessary to keep or improve device yield. In etching tool, accurate tuning knob of etching performance within a wafer is required. Tuning byproduct density in the reactor will be reported by using Multi-gas injection system, which is developed as the tuning knob.