[19p-C204-1~17] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

[19p-C204-8] Electronic properties and dissociation channels of C₂H_xF_y compounds (I)

〇Toshio Hayashi¹, Kenji Ishikawa¹, Makoto Sekine¹, Masaru Hori¹ (1.Nagoya Univ. Plasma nano Technology Center)

Keywords:SiNx etching, Hydrofluoroethane, computational chemistry

CH2F2 is mainly used in reactive ion etching for silicon nitride film. However, the important species for silicon nitride etching (CHxFy) are produced from many other compounds. Therefore, we investigated electronic properties and product channels of C2H5F and CH3CHF2 gases using computational chemistry. the results shows that CHxFy species are also produces from CH3CHF2.