The 65h JSAP Spring Meeting, 2018

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13 Semiconductors » 13.7 Compound and power electron devices and process technology

[19p-C302-1~18] 13.7 Compound and power electron devices and process technology

Mon. Mar 19, 2018 1:45 PM - 6:30 PM C302 (52-302)

Kozo Makiyama(Fujitsu Lab.), Masashi Kato(NITech)

4:45 PM - 5:00 PM

[19p-C302-12] Characterization of AlGaN/GaN recessed MIS-HEMTs using sputtered SiN as gate dielectric

〇Wataru Gamachi1, Joel Asubar1, Hirokuni Tokuda1, Masaaki Kuzuhara1 (1.Fukui Univ.)

Keywords:SiN, MIS-HEMT, AlGaN/GaN HEMT