The 65h JSAP Spring Meeting, 2018

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13 Semiconductors » 13.7 Compound and power electron devices and process technology

[19p-C302-1~18] 13.7 Compound and power electron devices and process technology

Mon. Mar 19, 2018 1:45 PM - 6:30 PM C302 (52-302)

Kozo Makiyama(Fujitsu Lab.), Masashi Kato(NITech)

5:00 PM - 5:15 PM

[19p-C302-13] Fabrication of high thermal-tolerance AlGaN / GaN HEMT with p+-Si gate contact

〇Shunichi Kohno1, Jianbo Liang1, Naoteru Shigekawa1 (1.Osaka City Univ)

Keywords:Surface Activated Bonding, GaN, HEMT