[19p-C302-1~18] 13.7 Compound and power electron devices and process technology

[19p-C302-17] Interface State at AlGaN/GaN Interfaces of Polarization-Junction Substrate

〇Takuya Hoshii¹, Rumi Takayama¹, Shuma Tsuruta¹, Akira Nakajima², Shin-ichi Nishizawa³, Hiromichi Ohashi¹, Kuniyuki Kakushima¹, Hitoshi Wakabayashi¹, Kazuo Tsutsui¹ (1.Tokyo Tech, 2.AIST, 3.Kyushu Univ.)

Keywords:GaN, Polarization-Junction Substrate

We will report that the measured depletion voltage of the two-dimenational carrier gas of the p-channel GaN MOSFETs on polarization-junction substrate can be well reproduced in the device simulation by introducing interface states at AlGaN/GaN Interfaces.