The 65h JSAP Spring Meeting, 2018

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13 Semiconductors » 13.7 Compound and power electron devices and process technology

[19p-C302-1~18] 13.7 Compound and power electron devices and process technology

Mon. Mar 19, 2018 1:45 PM - 6:30 PM C302 (52-302)

Kozo Makiyama(Fujitsu Lab.), Masashi Kato(NITech)

2:15 PM - 2:30 PM

[19p-C302-3] Impacts of surface potential fluctuation on carrier mobility in an inversion layer of GaN MOSFET

〇Noriyuki Taoka1, Toshikazu Yamada1, Shimizu Mitsuaki1 (1.AIST GaN-OIL)

Keywords:GaN, MOSFET, MOS interface